Dual-electrode Quantum Well SOA Simulation Based On Circuit Model And Its Driving Circuit Fabrication

Semiconductor optical amplifier (SOA) has been widely applied in the optical communication field as a core component of semiconductor optoelectronic device. Compared with common SOA (single-electrode SOA), the gain and dynamic characteristics of the multi-electrode quantum well SOA(QW-SOA) have been greatly improved which enable QW-SOA a very wide range of potential application in optical fiber communication. This thesis mainly focuses on the theoretical simulation and practical application of the dual-electrode QW-SOA as following:In theoretical simulation, circuit model based on the standard equation of QW-SOA is derived. Since the circuit model has a lot of advantages in the simulation of optoelectronic devices, static gain and dynamic gain characteristics of QW-SOA have been studied with the established model. The results show that in the static gain characteristics, the larger the front electrode injection current is, the easier the gain saturates; In the dynamic characteristics, the front electrode injection current has very little effect on the SOA gain recovery time, however, the back electrode injection current has a great influence on the gain recovery time.In experiments, multi-electrode SOA driving platform is analyzed and improved. Experimental results verify partial simulation results. In addition, large current-driven platform is also designed and fabricated. It can provide pulse current with maximum pulse current up to 4.8 ampere, repetition rate up to 50 kHz. The temperature can be controlled with accuracy of 0.05℃. Besides, the system control circuit based on ATmega16 can provide over-current and over-temperature protection.