The Effects Of The Technological Parameters On Minority Carrier Lifetime In CZ Si Growth Process

Under the background of the global economic rapid development, the fossil energy wasincreasingly exhausted, and the environment problem becomes increasingly serious. In thispaper, the feasible measures are given about the issue that reducing solar cell cost andimproving the conversion efficiency of solar cell. Solar energy has advantages ofinexhaustible and pollution-free, becomes the best choice in all new energy. While in solar cellmaterials, monocrystalline silicon solar cells take the largest ratio. Minority carrier lifetime isvery important parameters to affect the efficiency of solar cells. Minority carrier lifetimedirectly affect monocrystalline silicon solar cell's conversion efficiency. Based on the actualproduction, the influence of the technological parameters to Minority carrier lifetime wasdiscussed,and the most favorable technological parameters were obtained in this paper.In this paper, 24" thermal field was installed in KX260 crystal growth system with 120kgmaterial , 5 different metal level were installed and other technological parameters were same,then 5 ingots (φ200mm, P type, < 100 >, resistivity: 2Ωcm) were produced. The relationshipbetween different metal level and Minority carrier lifetime was analyzed. The experimentalresults were obtained: With the ascension of metal level, Minority carrier lifetime graduallyreduced.Then, 24" thermal field was installed in KX260 crystal growth system with 120kgmaterial, Crucible Rotation was installed 8rpm and Crystal Rotation was installed 6rpm,10rpm, 14rpm, other technological parameters were same, 3 ingots (φ200mm, P type, < 100 >,resistivity: 2Ωcm) were produced. Then the relationship between different Crystal Rotationand Minority carrier lifetime was analyzed. The experimental results were obtained: the fasterCrystal Rotation, the better uniformity.In conclusion, and considering the actual production need, we can get the best suits ofcrystal growth metal level is -70mm, the most favorable technological parameters ofintegrity and uniformity is of crystal is Crucible Rotation 8rpm, Crystal Rotation 10 rpm.