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Study On The Performance Of Auxiliary Anode In The High-energy Ion Beam Sputtering Coating Machine

Posted on:2010-09-16Degree:MasterType:Thesis
Country:ChinaCandidate:D QiFull Text:PDF
GTID:2211330368999806Subject:Fluid Machinery and Engineering
Abstract/Summary:PDF Full Text Request
Magnetron Sputtering has been developed as one of the most important technologies in industrial coating, the distribution of plasma plays an important role in the process of magnetron sputtering. The characteristics of plasma including the energy of positive ions and the concentration of ions what affect the quality of film, etched area and the utilization of target. Many scholars are studying plasma-enhanced technology in order to improve the coating process. What the auxiliary anode of magnetron sputtering coating this paper studies is a new plasma-enhanced technology, so the study of this paper is very valuable.I design the installation structure of rectangle magnetron sputtering target, substrate plane and auxiliary anode in vacuum chamber based on the magnetron sputtering coating machine of Cemecon company. In the closed magnetic field formed by the four rectangle magnetron sputtering target, the auxiliary anode has been installed in place between adjacent two targets. The voltage of anode is higher than substrate plane.In this paper, the electromagnetic particle simulation procedures OOPIC (Object Oriented Particle in cell) is used for simulating the movement of electrons and positive ions in vacuum chamber. As the contrast the results between two situations, one has the anode and the other has no anode. Come to the conclusion that the auxiliary anode plays a role in expanding the plasma region, enhancing the ion kinetic energy and increasing ion density. But the voltage must be within appropriate scope, neither high nor low. If the voltage is too high, the plasma region can not expanded; if the voltage is too high, Positive ions number will show explosive growth. That is detrimental to coating process.With the simulation for the average energy and density distribution of the argon ion in the chamber of the system of the FJL560CIl Type Vacuum Film Coating Machine, we find the experimental results are accordant with the simulated data, give evidence of the correctness of the mathematical model.By changing the location and voltage of the anode obtain optimization of simulation results:the distance between the anode and the substrate is 20cm, at the same time the optimal voltage of the anode is 100V. In addition, the analysis of the working principle of the auxiliary anode is included in this paper.
Keywords/Search Tags:Auxiliary anode, Plasma, Magnetron Sputtering, OOPIC, Closed magnetic field
PDF Full Text Request
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