Fabrication Of Porous Silicon And Research On Luminescence Of PS

In this thesis, p-type Porous Silicon was obtained by conventional electrochemical anodization. Morphology of p-type Porous Silicon was observed by scanning electronic microscope (SEM), porosity and thickness of p-type Porous Silicon was studied by calculating weight loss. The influence of etching time, current density and HF concentration to the fabrication of p-type Porous Silicon by conventional electrochemical anodization was studied. The results showed that increase of etching time, current density and HF concentration, the porosity of p-type Porous Silicon increase, then decrease and the thickness of the Porous Silicon is increased gradually, which fit a linear relationship.Photoluminescence of Porous Silicon was indicated by fluorescence spectrum at room temperature. The dependence of room temperature visible photoluminescence of Porous Silicon and its microstructure on the anodization conditions, such as etching time, current density and HF concentration were studied. The results showed that the increase of etching time, current density and HF concentration results in a blue shift of luminescent wavelength.At last, The optimum technology of the Porous Silicon fabrication was determined by orthogonal experimental design. The research results of the experiments show that conditions for etching time 30min, current density 12mA/cm2 and HF concentration 6wt%.