Led Chip Process Parameters To Analytical Techniques

As the next generation of illumination,Light Emitting diode is a promising device in applications.For the high energy transaction efficiency,long life time and the environment friendly merits,LED is important in the lighting industry for the sustainable society in the future.The current bottleneck of the LED development is on the accurate control of the film thickness and the component of compound semiconductor film,so it is important to develop a set of technology in analyzing the growth process of the LED chip.Spectrophotometry and Forouhi-Bloomer Dispersion Equations are introduced to calculate the film thickness d.Comparison of result with the SIMS,ellipsometer and SEM measurements verify the test result by the n&k method.The elemental component x is determined by the data comparison of experimental refractive n to the database theoretical value.The result of this comparison technology is verified by the XRD and XPS testing methods.FIB lift-out method and TEM test are introduced to measure the quantum well structure.This set of technology is not only an available method to analyze the film thickness and the component of semiconductor film,but is also a feasible technology in process control and process improvement.For the high testing speed and the non-destructive merits,this technology meets the requirement of the industrial online environment to test the uniformity of the film grown and can offer reference for the process improvement.