Based On The The Fdtd Vertical Through-hole Analysis Of Microwave Circuits

With the fast development of the micro-electronics technology, the miniaturization and high-density Packaging of the electronic system have become a trend. During the Past half century, the microwave circuit has passed through the course that is either from low frequency to high frequency or from single layer to multiple layers and the microwave multi-chip module(MMCM)comes into being ultimately. However, the system signals Peed is becoming faster and faster increasingly and the parasitic effect caused by the interconnect and Packaging in MMCM is also becoming more and more serious,which has become the limiting factor for the whole system performance. In multiple layers MMCM, the transmission line-via-transmission line is very typical interconnect model and the vertical via interconnect is often used to connect the transmission lines in different layers, so the study on this type of interconnect is very important for the modern electronic system design.With the contineous development of the computing technologies and the integration of the microwave circuit, it is very difficult to use the Analytical methods to solve the problem about the microwave circuits. In the other hand, with the tremendous development of the computer technology, the numerical simulation methods have become more and more popular.Firstly, this thesis introduces the basic theories of FDTD. Then the theory about the absorbing border condition as well as a new modified PML is introduced in the chapter because of the importance in practice.At last, two types of microstrip-via-microstrip are simulated using the FDTD. And the scattering parameters are also analyzed and one conclusion is obtained which is helpful to study the more complex interconnect further.