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Srtio <sub> 3 </sub> -gaas ( Gap ) Heterojunction Structure And Electronic Properties Of

Posted on:2009-09-05Degree:MasterType:Thesis
Country:ChinaCandidate:G L YangFull Text:PDF
GTID:2208360245461043Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The electronic properties of the heterojunctions between the ferroelectric crystal SrTiO3 and photoelectric material GaAs and GaP are systematically studied by the first-principles calculations of the pseudo potential plane wave based on density functional theory.We analyze the crystal structures and electronic properties of SrTiO3, GaAs and GaP. The Ti-O bond and the Sr-O bond in the SrTiO3 are explained. For the zinc blendes of GaAs and GaP, the top of the valence band, the bottom of the conduction band, the Ga-As bond and the Ga-P bond are discussed. We research their surfaces on the basis of crystal analysis. The (001) SrTiO3 surface is weekly polar. The surface-Ⅰis more stable than surface-Ⅱin most chemical conditions. The (001) surfaces of GaAs and GaP is polar. We compare the surfaces' properties with and without the H-saturation. We can get that the H-saturation is important for shielding the under surface.So, we use the H-saturation skill to eliminate the dangling bonds in the under surface. On the basis of the surfaces, we discuss the theoretical models by analyzing the experiment reports of the SrTiO3-GaAs heterojunctions. We get the matching interface of SrTiO3 and GaAs, which is the (001) SrTiO3 and the (001) GaAs. But the GaAs lattice need rotate by 45°(or the SrTiO3 lattice need rotate by 45°) to [110]. Because we know the SrO termination is more stable. We make the SrO termination to be our interface. By the interfacial calculation and analysis, we find that SrO-As has lower energy and the action of their interfaces is stronger, which is more stable.For the SrTiO3-GaP heterojunctions, we base on the analysis of the SrTiO3-GaAs heterojunctions. We get the matching interface of SrTiO3 and GaP, which is the (001) SrTiO3 and the (001) GaP. But the GaP lattice need rotate by 45°(or the SrTiO3 lattice need rotate by 45°) to [110]. By the interfacial calculation and analysis, we find that SrO-P has lower energy and the action of their interfaces is stronger, which is more stable.It is studied theoretically that is the electronic properties of the SrTiO3-GaAs and SrTiO3-GaP heterojunctions. We get the stable interfaces. The stable interfaces in the SrTiO3-GaAs heterojunction is the SrO-As interface of SrTiO3(001)||GaAs(001) and SrTiO3[110]||GaAs[100]. The stable interfaces in the SrTiO3-GaP heterojunction is the SrO-P interface of SrTiO3(001)||GaP(001) and SrTiO3[110]||GaP[100].
Keywords/Search Tags:Density functional calculations, Heterojunction, Band Structure, Density of States
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