Millimeter-wave Slow-wave Oscillator

High power millimeter microwave device is an important part of high power microwave technology. Slow-wave device is interested by the scientists all over the world. This dissertation gives theoretical, numerical, software and PIC simulative research on the high-power millimeter wave band Slow-wave device. Several valuable academic achievements are obtained.First, successfully using general method is applied to two typical slow-wave structure (SWS), namely disk-loaded and modified disk-loaded structures. In principle, the linear analysis can be applied to efficiently calculating all kinds of beam-wave interaction in various Slow-wave devices composed of axisymmetric SWSs with arbitrary periodic profile. Then, calculate the dispersion equation; draw the dispersion curve by two ways. Compare the two methods and make sure that the CST software simulation is reliable.Second, study several methods which are effective to restrain the competition of modes. Solve the problem of the modes'competition is very important for increasing the output power of Overmode high power millimeter wave oscillator.Third, particle simulation method is used to investigate the properties of the millimeter wave band device with large diameter, short period and two section SWSs, with frontal or back resonator. Both disk-loaded and modified disk-loaded structures are studied. This work includs the basic physical processes of the beam-wave interactions and the dependence of the microwave radiation on the structure parameters, and the guiding magnetic field intensity. The simulation results confirm that the modified disk-loaded structure with two section SWSs can generate the highest output power at 8 mm band, and the disk-loaded structure with frontal resonator can generate the highest output power at 3 mm band. A set of optimum parameters are given. The typical simulation results are that, the output power of 8 mm band is 650MW, and the output power of 3 mm band is 565MW. TM 01mode is the operating mode of the two devices. The results of PIC simulation provide theory foundation for subsequent experiment study.