.algan / Gan Hemts The Class E Power Amplifier Design

The rapid development of the wireless communication technology demands higher performances of the power amplifier, including power, frequency and temperature properties. As a typical member of the third generation semiconductor materials, GaN makes the research of the AlGaN/GaN HEMT power amplifier popular for its prominent electrical and chemical characteristics. An AlGaN/GaN HEMT model will be built and the corresponding power amplifier will be presented in this thesis.The parameter extraction methods influence the AlGaN/GaN HEMT model precision directly. Aiming at the shortages of the simulated annealing algotithm in the aspect of optimizing speed, an improved simulated annealing algotithm will be proposed by modifying the traditional algotithm in the respecting of disturbing mechanism, annealing method, memory function and backfire mechanism. It is indicated that the proposed algotithm has speeded up by 20% compared with the traditional one by MATLAB simulating.Based on the working principle of the AlGaN/GaN HEMT, current collapse can be described by adding an additional RC subordinate circuit to the equivalent circuit topology architecture and the self-heating effect can be demonstrated by complementing the temperature characteristic on the basis of the large signal current model. Hence, the AlGaN/GaN HEMT equivalent circuit model has been well improved. The deviation between the I-V curve and the testing figure is below 5%,while the deviation between current collapse simulating result and the testing figure is below 10%, which indicates high resolution of the improved model.According to the built AlGaN/GaN HEMT equivalent model, a high efficiency AlGaN/GaN HEMT class E two-stage power amplifier operating at 2.4GHz has been designed in this thesis, using a quasi-F class amplifier as its front stage. An output power of 33dBm,a power gain of 28dB,and a PAE of 66%can be achieved according to ADS simulation results.