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Silicon Electromagnetic Incentive Declining Flow Road Components

Posted on:2007-04-15Degree:MasterType:Thesis
Country:ChinaCandidate:D M LiFull Text:PDF
GTID:2208360185469614Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
This thesis puts forward a new kind of method of inductor fabrication, whose internal down-lead adopts ohm contact formed by the boron heavily doped region and the Au evaporated. We design the related fabrication process and the scale of mask for inductor on a silicon, and validate the feasibility by the IntelliSuite soft, then simulate the relations of carrent versus Magnetic Flux Density by Ansys soft and the distribution of eddy and so on. All of these simulations provide reference for further compare and analyse for theory and experiment of planar spiral inductor. During the process, we find out the crucial factor of the performance of planar spiral indcuctor, that is eddy effect on substrate. So we fabricate the inductor on the silicon cup, then dig holes on the back of silicon cup by laser to further reduce substrate thickness. As a result, the substrate thickness reachs 5μm, which can greatly reduce eddy effect and increase quality factor. Moreover, we adopt Al2O3 as the dielectric film between the coils and substrate, whose dielectric performance is better than SiO2. As conclusion shows that our planar spiral inductor has the advantages of simple technology and compatibility with IC thecnology, and that it has extensive future.
Keywords/Search Tags:MEMS, heavily doped region, internal down-lead, laser hole, silicon-based inductor
PDF Full Text Request
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