Superlattice Quantum Well Optical Properties

Superlattice and quantum well materials of semiconductor are new-style synthetic materials made in modern film growth techniques. The periodicity of materials is alternated at will by the people's need, so moved electron and holes in them append man-made periodical potential. Because of this point, superlattice and quantum well materials have many different special characters with nature materials, have wide applied prospects. They have become a very active investigative domain in semiconductor physics, material science, microelectronics, and optoelectronics.Appearance of superlattice and quantum well materials takes on important meaning not only in theory but also in practical application. From their appearance to these days, investigation of physical character and growth techniques of microstucture materials have developed advance rapidly. They have increasingly extensive applications in aspect of photics and electronics device too. Each progress of the domain becomes remarkable thing in the domain of modern solid-state physics and solid-state device.This article reviews research of superlattice and quantum well materials in the near years. It studies on superlattice and quantum wells of GaAs/AlGaAs made in MBE. It mostly includes three parts.Chapter one is about basic theory of superlattice and quantum well materials. We give the conception of superlattice and quantum wells, and basic quality.Chapter two introduces the growth techniques of superlattice and quantum well materials, the method of molecular beam epitaxy, growth mechanism and structures, and manufacture of sample.Chapter three is consults and analysis of experiment. superlattice andquantum well materials of GaAs/Alo. 3Gao. 7AS have been successfully grown on (100) Si-doped GaAs substrates by molecular beam epitaxy at 650°C. Photoluminescence spectra of the sample are measured at 300K. We calculate the position of photoluminescence peaks by theory and make sure of its cause. The stong peak is attributed to recombination of electrons on exciton state near .quantum well of the top and holes on acceptor impurity. Raman scattering and photocurrent spectra for GaAs/AlojGaojAs superlattice are measured at 77K. Scattering peaks are related to coupling modes between plasmon and longitudinal optical phonon. From the electron wave point of view, accounted for the reflection and interference of electron wave, we ananyze photocurrent.