Sro Thin Film Sputtering Growth

SrRuO3 is a perovskite metallic oxide and the resistivity of thin film is280μ?-cm at room temperature with good chemical and thermalstabilization. It has the similar crystal structures good crystal matches withferroelectric thin film such as (PZT, BST ) and as a electrode material offerroelectric thin film devices. The major task of the dissertation is thegrowth craft of SRO thin film for the application of ferroelectric devices.The preparation of cylindrical SRO ceramic target was experimented.The optimal firing process was determined based on a series of experiments.SRO ceramic target with high density and homogeneous roar grains wereprepared at 1550℃for 24h.SRO thin films were deposited by inverted cylindrical DC sputteringon LAO and Pt/Ti/SiO2/Si substrates. The effect of substrate temperature,the total pressure, the ration of oxygen to argon .And the DC power on thesurface morphology and crystallization of SRO thin film were summarized.SRO thin film with no pinhole ,smooth surface and good crystallizationwere prepared. The resistivity of thin film is 370μ?-cm at roomtemperature.The dielectric properties of BST/SRO integrated thin film weremeasured. The dielectric constant is about 510 under no bias voltage. Theloss tangent data ranged from 1.6%-2%. The Currie temperature was288K. The leakage current density is 2×10-7A/cm2 under 70KV/cm stress.The asymmetry on the C～V curve was observed . It was attributed to theformation of series capacitance by the BST thin films and the interface andthe bottom electrode.The dielectric properties of BST/SRO and BST/Pt was compared thosewas deposited under the same conditions. It was observed that the losstangent data and leakage current density of BST/SRO was lower than that ofBST/Pt. It was demonstrated that SRO was one of good electrode materials.