The High Power 980nm Vertical Cavity Surface Emitting Laser Array,

Vertical-cavity surface-emitting lasers have the potential to become the new light source in information age for their excellent performance.In this thesis,we give some results on the design and fabrication of 980nm VCSELs array,the main work is as follows: Based on the rate equations for multi-quantum wells of vertical cavity surface emitting laser (VCSELs), the relation of threshold current and output power was simulated. Thermal distributing of device was also deduced from current transport model. The effects of DBR reflectivity and well numbers on threshold current and output power of bottom-emitting VCSELs were analyzed to design an optimal device structure. We have explored technologies for the fabrication of VCSELs, such as wet etching,wet and selective oxidation and annealing. By using wet etching and selective oxidation process,we fabricated 980nm high power VCSELs. The continuous-wave (CW) output power as high as 1.95W with active diameters up to 500μm and 600μm have been achieved, which, to our knowledge, is the highest value reported for a single device. The dependence of thermal resistance, emitting wavelength, FWHM, and output power on active diameters and injection current was studied. The near-field and far-field pattern of light intensity of a 200μm diameter device exhibits a homogeneous current distribution and a single transverse mode operation. 980nm VCSEL array was fabricated and the comparison of output power and spectrum of array device with single device of same active area was analyzed.