Tubular Zno Controllable Growth And Optoelectronic Properties Of Self-organization

Zinc oxide (ZnO) is a wide-bandgap semiconductor that possesses excellent optical and electronic properties, and as a result it stimulates a broad range of researching interest. Its quantum confinement effects become more and more visible with decreasing in size of ZnO particles. ZnO low-dimensional materials,which have various shapes and special properties,and device can be acquired through ZnO self-organized growth. In this paper, properties, characteristics, prepared methods and development of ZnO low-dimensional materials have been fully summarized, especially progress and development of ZnO low-dimensional materials. Tubular ZnO had been prepared successfully by hydrothermal method ,and the optimal process and morphology in every step of tubular ZnO had been found through plenty of experiments and scientific analyses. By lots of testing and analyses time after time, Ohmic contact is formed Between Au and ZnO and the related resistance is about 27Ω. The forward and reverse current of n-ZnO/p-Si increase exponentially with applied voltage, which corresponds with instance at positive reverse barrier. There appears photovoltaic effect with illumination at 365nm. The photoluminescence(PL) measurements of tubular ZnO revealed an intensive UV peak at 380 nm corresponding to the free exciton emission at room temperature, and the PL spectra appear at an obviousely redshifted position with the increasing of temperature. The results indicate that ZnO hexagonal prism microtube has negative temperature coefficient and excellent properties of gas sensitivity in 200℃, which is lower than ordinary ZnO thin film.