Electric Field Under The Action Of The Minority Carrier Recombination Rate Model And Related Devices

With the development of semiconductor device research and manufacturing technologies, in order to improve the integration degree and circuit performance, transistors are largely scaled down. Recent progress in both bipolar and MOS technologies, such as lateral downscaling, shallow-junction formation, and the use of self-alignment techniques, have led to an increase in electric field strength around p-n junction in these devices. Thus, research on the high internal electric field is becoming more and more important. For cooperating with device simulation, the model modification must be taken account of.Based on the electron-hole generation-recombination mechanism, existing researches modified the electron-hole generation-recombination model to include band-to-band tunneling, trap-assisted tunneling, Shockley-Read-Hall recombination and avalanche breakdown.This paper introduces the Poole-Frenkel effect, which describes the relationship between the electric field and potential barrier. The new gneration-recombination model including this effect have been devised, which is suitable for implementation in a device simulator. Under different temperatures, some diode characteristics have been presented after simulation. The results fits the theoretic prediction well.