Wavelength Of 1.3¦Ìm High-speed Photodetector,

The frequency and sensitivi ty specific property of a high speedphoto--detector is synthetical ly taken into account. GaInAs/InP PINphotodiode's structure parameters are made through with optinum design. Keytechnologies of deve1oping high speed photo--detector have been worked out,such as, high pure and extra--thin GalnAs/InP material's epitaxy, shallowjunction diffusion in activity area, double layer passivation fi lm to reduce1eakage current, litt1e light sensi ti vi ty area coupl ing wi th fibre, high speedphoto--detector microwave packaging wi th coaxial structure. As a resul t, a longwave high speed Ga1nAs/InP PIN photo--detector has been developed, it's 3dBbandwidth has reached 20GHz, resoposibi1ity 20. 70A/W, dark current <5nA.