| Silicon Germanium Heterojunction Bipolar Transistor (HBT) has perfect frequency performance which traditional bipolar transistor does not exist, so it could be extensively applied in radio frequency electric circuit. Comparing with Gallium Arsenide RF devices, SiGe HBTs have the merits of low cost, good thermal conductance, wonderful substrate mechanicalness and so on.To break the patent monopoly in the field of SiGe RF device, this paper shows a novel SiGe HBT device structure. After validating and optimizing the manufacturing process, I evaluate the performance of this new SiGe HBT structure.The main contribution and innovation are the following:1. This paper presents a new 0.13um SiGe HBT device with the technology of pseudo-buried layer and deep contact process. Comparing with the other structure reported domestic and abroad, this novel structure has the merits of high integration and a simple process flow. With such structure, this new design at least saves one photolithography process and about 40% area, greatly improving the integration and reducing costs.2. Using Synopsys Taurus process simulation software to make device-level simulation, eventually I verified design feasibility, getting trend of how different process conditions affect device performance.3.The entire manufacturing process is validated and optimized by changing the emitter, base, and RTA temperature, getting the best emitter and base impurity distribution. So the device performance gets improved. Performance of the original device:the current gain 100, cutoff frequency ft= 80G, Maximum oscillation frequency fmax= 75G; the optimized device performance:the current gain of 110, the maximum cutoff frequency ft= 112G, Fmax= 100G.The results show that the new structure SiGe HBT in this paper gets higher integration and reduces process cost when maintaining excellent RF performance. This paper aims to develop a self-owned intellectual property SiGe HBT device which has a low cost and high yield. |
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