Based On L-edit Design And The Minitab, Jmp Analysis Of The Transistor (npn Type) Current Characteristics Enhanced

Transistor high-current performance indicator is the most important indicator for its performance. Meeting with certain BV_ceo and h_FE, the higher the current is, the better the performance is with the same chip area . Users can use this kind of transistor to produce higher-power energy-saving lamps, while transistor falling time t_f is well under control and high-current Vces is reduced. In this way, product quality is improved while cost is lowered.In view of the above customer expectations, we have tried to improve high-current characteristics of transistor through horizontal design optimization ,vertical doping optimization and junction depth verification, and single crystal resistivity optimization without changing the chip area and BV_ceo and h_FE. Those improvements include increasing high-current h_FE, lowering high-current Vces, reducing Tt as well as process optimization which applies those improvements to mass production.In this paper, through theoretical analysis and appropriate experiments, we have developed method which can be used for mass production and improving high-current characteristics of transistor by repeatable results. The experiments are as following:1. Selected an online product to do layout optimization, obtained a bigger perimeter to area ration without changing the layout area. But the improvement is limited and not suitable for online production batch conversion, so this experiment is just for data collection;2. Selected at least three varieties of online products to conduct vertical doping test, confirmed the final method can be promoted through a large number of experimental data and analysis (high concentration technology);3. Selected at least one online product to do junction depth experiments. Because the light junction depth will affect BVcbo while the heavy one will affect characteristics of BVcbo, so this experiment is only for data collection.4. Selected at least one online product to test different resistivity of single crystal, found the current characteristics becoming better with the resistivity becoming higher through data analysis. Our company has adjusted the resistivity of raw crystal according to the experiment results.5.Selected at least one online product to adjust the conflict between altered design/process and mass production. Merged high concentration process into current production process through online process optimization.6. Completed the routine packaging test after design and process optimization, test of high temperature hFE change rate , SOA test. And finally met the product requirements;This chapter eventually confirmed the improved plan and has reached the expectation of improving the transistor characteristics of large current without changing the layout area and mass production and promotion.