Studies On The Optical And Electrical Properies Of Zao Films And Preparation Of Zao Target

At present In2O3:Sn(ITO) as transparent conductive oxide thin film have been widely used in many fields, the technology is mature. Because of the complicated preparing processes, the toxicity and the unsteability, the application of ITO is limited. The ITO films will be replaced by ZnO:Al(ZAO) films. The ZAO thin films not only have the same outstanding optical and electrical properties with ITO, but also have the advantages of rich in raw material, innocuity and the simple preparationIn my experiment, the technology of sintering ZAO ceramics target and properties, the optical and electrical properies of ZAO films and microstructure of ZAO films were researched.In magnetron sputtering experiment, preparation and selection of ZAO target is very important. Target will affect quality of the ZAO thin films. ZAO ceramics target was prepared by pressureless solid-state sintering after molding pressing in the air. Phase structure and microstructure of ZAO ceramics target were analysed during sintering process. The results indicate that density of target is optimal when intensity of pressure is 96MPa. The density of ZAO target becomes obviously higher from 1100℃～1300℃, and the rising-trend becomes slower after 1150℃. ZAO ceramics target become more uniformity and have higher relative density (94%) and lower porosity (1.06%) at 1300℃for 6h. The ZAO ceramics target can be used for magnetron sputtering experiment.In my experiment, the ZAO thin films will be applied for solar cell. It requests low DC power, low substrate temperature and more quality ZAO thin films below these condition preparation. It was concluded that technology of DC magnetron sputtering parameters had great influence on films. The substrate temperature had great influence on performance of films. Conductivity of the ZAO thin films become still better with increasing the substrate temperature. When the substrate temperature is 200℃, conductivity of films is best. The sheet resistance of ZAO films is 3.67×106Ω/(?) and average transmittance of films is higher than 85%. Thickness of the films become thicker with prolonging time. At the same time, the resistance of films is downward and the optical property of films is worse. We can select thickness of the films by solar cell. The results show that annealing temperature significantly affect the microstructure and morphologies. The square resistance of films become still less with increasing temperature of annealing, but temperature of annealing affecta little on transmittance of films.