Chemical Vapor Deposition Of Zno Films Prepared And Performance

The thesis focused on the practical application of ZnO thin films and exploiting comparatively cheap equipment, preparing a~b oriented ZnO thin films in high-temperature tubular furnace using chemical vapor deposition (CVD) method and ZnxOyCzHi as solid phase source. Growth mode,structure and optical properties of ZnO thin films were mainly studied. Preparation of p-type ZnO thin films were also put into practice after high-quality pure ZnO thin films being prepared. Specific contents are as follows:1. Main factors's during the preparation process were separately studied, x-ray diffraction(XRD),scanning electron microscopy(SEM) were used to test the crystallization and express the surface topography of the ZnO thin films, photoluminescence(PL) were also used to confirm some of the conclusions from the prior analyses. The conclusions are as follows: position of substrates,temperature of source and the flow of carrier gas only impact the crystallinity of ZnO thin films, while temperature of substrates impacts both preferred orientation and crystallinity of ZnO thin films. Well-crystallized a~b oriented ZnO thin films were prepared when the temperature of source was 180℃, temperature of substrates was 400℃, flow of carrier gas was 20sccm.2. Study disclosed that heat treating could improve the crystallization of ZnO thin films. Good results in full wave at half maximum(FWHM),dissymmetry factor and preferred orientation of ZnO thin films were gained under appropriate heat treating temperature. In this thesis, the most appropriate heat treating temperature is 800℃.3. Preparation of p-type ZnO thin films were put into practice after the growth conditions of pure ZnO thin films being confirmed. In this thesis, NH3 was chosen as impurity gas and carrier gas, SEM,electron diffraction energy spectrum(EDS) and hall impact coefficient were used to express the surface topography,component and current carrier type of ZnO thin films. The EDS result showed that: the carrier gas's sort could obviously impact growth type and surface topography of ZnO thin films; n-doped ZnO thin films had been prepared but with no P-type qualities for the hall coefficient of the N-doped ZnO thin films was negative.