| Application of ceramic materials is confined for their brittleness. Ti3S1C2 ceramic is considered that has developing perspective material because it has good plasticity and comprehensive property at high temperature. However, synthesizing process rang is narrow in producing Ti3SiC2 ceramic and it is difficult to obtain Ti3SiC2 ceramic of large measurements. Therefor, Ti3SiC2-matrix composite is a better means for taking advantage of comprehensive mechanical property of Ti3SiC2 ceramic. Solid state displacement reactions are being as a better technique to produce Ti3SiC2-matrix composite in- situ by their merits of simple fabrication and low price. The paper adopts the solid state displacement reactions to synthesize in-suit composite of T13S1C2/SIC. The means is using good mechanical property of Ti3SiC2-matrix composite. Principle, reaction route and mechanism of the solid state displacement reaction are researched. Moreover, the diagram of chemical potential is an effective implement for judging route of chemical reaction, A simple mode of estimating Gibbs free energy of mid-compound mapping-decomposition hollow-square mode, which can calculate diagram of chemical potential, are put forward. The diagram of chemical potential about every element is obtained according to the ternary Ti-Si-C diagram. The reaction route of synthesizing Ti3SiC2/SiC composite is also gained. As a result of experiment, T13SiC2/SiC composites are attained. T13SiC2ISiC composites having the different mechanical properties for meeting condition of different work circumstance are fabricated by adjustment of raw material. In this paper the mechanism of in-suit reaction of a solid state displacement and method of interface grow are discussed. According to the results of experimenttr, the lost of silicon, whichis influenced by temperature and press, is a reason of no completereaction. Therefor, adjusting progress, especially relation oftemperature and press, is necessary to synthesize Ti,SiC,/SiCcompo site. |
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