The Theoretical Research On Effects Of Photoelectric Properties Of 2H-SiC Nanowire

As a typical wide band gap IV-IV compound semiconductor, silicon carbide(Si C) is the third-generation semiconductor of the recent years with the greatest potential. Si C has got more and more attention by showing potential applications in the fields of high temperature, high power, high frequency, anti-radiation, short wavelength emitting materials and optoelectronic integrated devices. Now we have found nearly 260 kinds of silicon carbide.The most unstable is 2H-Si C and the most studied is 3C-Si C.Due to the growth condition is harsh,2H-Si C did not get research widely. Generally, nanomaterials have many basic characteristics such as surface effect, small size effect and quantum size effect. But the study found that when the diameter of nanowire decrease to below 20 nm,2H-Si C nanowire become extremely stable. The purpose of this paper is to study 2H-Si C materials. The main content are summarized as follows:First of all, the paper briefly describes the historical background of semiconductor, basic theory and Castep software that we used.Then we use Castep module to study the saturated nanowire and unsaturated nanowire.People define the nanowire whose surface were saturated by hydrogen atoms were saturated nanowire,another nanowire whose surface were not saturated by any atom as unsaturated nanowire.Especially we compared them with 2H-Si C bulk. The absorption spectrum, refractive index have been analysed then.Finally, we used one nitrogen atom to replace one carbide atom in the structures of nanowires and bulk.The electrical properties,such as conductivity and dielectric function have been studied.We find that they exit many differences.