Fabrication And Physical Characteristics Investigation Of Hafnium Dioxide Thin Films

In the field of microelectronics, the development of integrated circuits has followed Moore’s Law. With MOSFET feature sizes continue to shrink, the equivalent oxide layer thickness is reduced to the nanometer level, this time as a traditional silicon dioxide gate dielectric material is close to the physical limit, the quantum tunneling effect causes the MOS leakage current increases rapidly, thus affecting the reliability and stability of the device. Therefore, the search is applied to the next generation MOSFET high dielectric constant materials to replace traditional silicon oxide have become the current hot research field of microelectronics and focus. The high dielectric materials such as constant SrTiO3, Ta2Os, Al2O3, ZrO2 and HfO2 have been researched in recent years. Among these high-k gate dielectrics HfO2 is regarded as the promising alternative materials due to its high dielectric constant, large band gap and thermal stability in contact with silicon. This article was prepared by RF magnetron sputtering hafnium oxide film, systematic study of the structure and optical properties of the experimental parameters depend on the hafnium oxide film. With the X- ray diffraction techniques, we analyzed the structural information of hafnium oxide film and explored the evolution of the micro-structure of hafnium oxide thin films with varying experimental parameters. By means of Fourier transform infrared spectroscopy, we analyses interface structure changes in the function of experimental parameters between the hafnium oxide film and the silicon substrate. To characterize the changes in the surface morphology of the film; atomic force microscopy and scanning electron microscopy have been used. By UV-visible spectrophotometer, we studied hafnium oxide film optical constants of evolution function effectively, obtained the absorption and transmission of the films, and calculated the optical bandgap of hafnium oxide film. The hafnium oxide film thickness, the refractive index, extinction coefficient and dielectric constant have been obtained by SE. The optical band gap value of the hafnium oxide film has been calculated by extinction coefficient converted to the absorption. All studies for hafnium oxide film applications in the future MOS devices laid the experimental techniques. The point of research and innovation of this paper are as follows:(a) Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power(b) Annealing temperature dependence on the structural and optical properties of sputtering-grown high-k HfO2 gate dielectrics(c) Multiply oxygen flow rate dependence on the structure, hydrophobic and optical properties of sputtering-grown HfO2 coatings...