Preparation Of SnO₂ Nano-film On The Substrate Of Sn And ITO And Their Property Of Photoluminescence

As a kind of important n-type direct-gap oxide semiconductor, SnO2 has widely application prospect in the field of photoluminescence for its excellent chemical and physical properties. By using hydrothermal method, SnO2 nano particles has successfully prepared on the substrate of Si and SnO2 nano array has successfully prepared on the substrate of ITO, the internal connection between the photoluminescence of SnO2 and its microstructure morphology, doping concentration has been revealed in this paper.In this paper, the process parameters of using tin sheet and butylamine or SnCl·5H2O and sodium hydroxide to prepare SnO2 has been optimized by the orthogonal theory. The orthogonal analysis results show that the reaction time is the key factors to prepare SnO2 nano particles substrate of Si, the sequence of other factor is reaction temperature and butylamine,and the reaction time is the key factors to prepare SnO2 nano array, the other factor is reaction temperature, [Sn4+] and [OH-]/[Sn4+ The reason for the formation of the two shapes of SnO2 has been analyzed, the result show that the environment driving force are play important roles in the formation of SnO2. The results of the test of the photoluminescence properties of the typical morphology of two kinds of products show that the light spectrums of two kinds of products are both from UV-light to blue-light, the lights come from oxygen defects and tin vacancy.By the optimization of process conditions of prepare SnO2 on the substrate of ITO, Sb doped SnO2(ATO) has been prepared, and the effect of Sb on the morphology and photoluminescence of SnO2 also be characterization.The result show that the higher of doping concentration of Sb, the morphology of ATO is not array, although Sb can make the photoluminescence property of SnO2 better, but the Sb doped SnO2 still can’t produces visible light.