Manganese (iron) Silicon Thin Film Microstructure

(1) Investigation on microstructures of MnSi_x and FeSi_x thin films by Raman SpectroscopyRaman spectroscopy is used to study the microstructures of MnSi_x and FeSi_x thin films annealed at different temperatures.Two phases of Mn silicides,MnSi_1.73 and MnSi,are identified,and their Raman spectra are firstly reported.Each phase of Mn silicides shows a set of three defined peaks at about 300 cm^-1 in the spectrum,which could be used as fingerprints in identifying the formation of those Mn silicides. Compared with conventional X-ray diffraction(XRD) method,Raman spectroscopy is found to be more sensitive one to investigate the microstructures of Mn silicides, especially at the initial stage in the formation of those Mn silicides.(2) Investigation on microstructures of Mn doped Si thin films and Fe doped Si thin films by double crystal X-ray diffraction(DCXRD)DCXRD is used to study the microstructures of Mn doped Si thin films and Fe doped Si thin films annealed at different temperatures.The shoulder appearing near the Si(400) peak was measured.When the shoulder appears on the right side of the Si (400) peak,it might be attributed to the presence of interstitial Mn atoms or Fe atoms in the Si material,which decrease the lattice constant.Meantime,the shoulder appearing on the left side of the Si(400) peak is related to the presence of substitutional Mn atoms or Fe atoms in the Si material,which increase the lattice constant.