Sic Mesfet Is Non-linear Equivalent Circuit Model

Silicon Carbide (SiC) is the third generation in semiconductor materials. It is a promising material in high power, high temperature, optoelectronics, and radiation resistant applications due to its excellent properties such as wide band gap, high electron saturated velocity, high breakdown electric field, high power density, high thermal conductivity, etc. Therefore the microwave power devices--Metal Semiconductor Field Effect Transistor (MESFET) based on SiC have received increased attention.Combining the equivalent circuit model with physical model, a large-signal nonlinear equivalent circuit model of SiC MESFET which is relevant to temperature is introduced in this thesis. From small-signal to large-signal step by step, the element parameters are extracted and simulated. By simulated, the S parameter and characteristic of direct current curves are got. Contrasted with the measurement curves, the model have much accuracy. And the Monolithic Microwave Integrated Circuit (MMIC) is designed and simulated.The work of this thesis not only provides some basic references for the further nonlinear microwave characteristics and device design for SiC MESFETs, but also instructs the further CAD oriented large-signal models and the design of MMIC of SiC MESFETS.