Charged Exciton System In The Infinitely Deep Gaas Quantum Wells Line The Variational Calculation

There is significant current interest in the exitonic properties and complicated exitonic properties in semiconductor quantum-well wires because of their role in optoelectronic applications. Extensive experimental and theoretical investigations of excitons and complicated excitons have been carried out. But, there are few papers to study charged excitons in the GaAs quantum-well wires. In this paper, we have studied charged exciton in the GaAs quantum-well wires.In the effective mass approximation, using two-parameter wave function. we calculated variationally the ground-state binding energy of excitons and charged excitons in the GaAs quantum-well wires. The reasonable results are obtained.Firstly, the binding energies of excitons in the infinite GaAs quantum-well wires are calculated variationlly. The results are basically in good agreement with the ones of the previous theories and experiments.Secondly, using two-parameter wave function, we calculated the binding energies of X* in the infinite GaAs quantum-well wires. The variational parameters can be determined based on the energy equation of charged excion. thus, the ground-state binding energy of system in the quantum-well wires can be obtained.Finally, the results are discussed and compared in detail with previous theoretical results. The conclusions are as follows:(1) The binding energy of the charged excitons decreases as the wire size increases, and it is considerably larger in narrow well width. As the wire width increases, the binding energy of the charged excitons decreases...