.13 Nm, Mo / Si Multilayer Residual Stress

We research the residual stress of Mo/Si multilayers firstly in China.The dissertation firstly discusses the reflectance of EUV and soft X-ray in " multilayer system based on classical electrodynamics and optical characteristics of materials. The nns surface roughness in different spatial frequency range is carefully studied since scattering can seriously reduce the reflectance in EUV and soft X-ray wavelength region. We discuss representative model of residual stress in. the multilayers and stress generating mechanisms.Stress in Mo, Si single film is studied. The magnetron sputtering method is adopted to grow single film samples, we take the precision measurement of stress by zygo interferometer. It is observed that growth of the Mo component in multilayers is tensile, while Si is compressive.Study of stress in Mo/Si multilayers are carried out for application of extreme ultraviolet multilayer coatings in the diagnosed high dense plasmas and EUVL. Stress generating mechanisms was discussed. The residual stress of 40-bilayer Mo/Si multilayers in a high reflectivity multilayer was -500 Mpa (compressive), stress generating cause may be attributed to interfacial diffusion. By varying Mo-to-Si ratio( ), stress in multilayers-can be compensated to a certian extent/And 13Mpa low-stress Mo/Si multilayers is fabricated.This research is supported by the National Natural Science Foundation of China and "863" Project of China and Innovation Foundation of China Academy of Sciences.