Since the concept of superlattice was proposed,vertical transport in superlattice has been investigated widely.The electric field domains and current self-oscillations which result from sequential resonant tunneling between different subbands of the superlattice are very significant phenomena.Such kind of oscillation can be uesd to make tunable microwave oscillaors.In this thesis, low temperature transport problem, especially the formation of field domain and the condition of current self-oscillations in doped GaAs/AlAs superlattice with weak coupling are investigated thoroughly and also by combining the macroscopic model with the microscopic one.,the voltage-current characteristic and the current oscillation are simulated.The calculated result is nearly consistent with the experimental data. |