Synthesis Of Diamond Thin Film Low Temperature

The synthesis process of diamond films and the theoretical model have been studied in this paper. Glow Plasma Assisted I-lot Filament Chemical Vapor Deposistion are adopted in experiments. The perpose is to reduce substrate temperature in order to realize low temperature synthesis of high quality diamond films and establish primary theoretical model of low temperature synthesis. Experimental system includes typical GPCVD apparatus.The component and structural characteristics of film samples are detected and analysed by using sanning electron microscopy (SEM), micro-Raman Spectroscopy and X-ray diffraction (XRD). The substract is (100) single crystal silicon, and operating gases are mixture of Cl-I4 and H2 in all experiments. Synthesis process of diamond films are studied systematically in experiments. Finally high quality diamond films are deposited at substrate temperature (3300C?500C ). A set of growth conditions should be optimized and Non-equilibrium Thermodynamic Coupling Model is used to interpret synthesis process of diamond films.