The Preparation And The Structure Of The Gallium Oxide Nanomaterials Characterization

With the progress of the society and the development of science and technology，theresearching of the low dimension nanomarterials has become a hot issue, and the mainfocus of the research is semiconductor nanostructures. Semiconductor materials exhibitunusual physical properties because of the quantum size effect, small size effect,surface effect, quantum tunnel effect and volume effect. By means of the specialproperties of nanomaterials, scientists made great breakthrough in every research field. Itcan also promote the application of nanometer materials. The influence of nanometermaterials has also involves many aspects, such as solar cells, transparent conductiveelectrode, gas sensor, transistors, etc. At present, the research of nanomaterials focuses ontwo aspects, The one is how to use simple and effective method to prepare low dimensionnanomarterials, the other one is the testing of basic characteristics, including surfacemorphology, optical properties and transport characteristics. Different Ga2O3nanostructures were prepared by heating Ga2O3powder and Au-coated Si (111)substrates for different times and different temperature in this article. We get the structureand morphology of the samples by using scanning electron microscope (SEM),transmission electron microscope (TEM), district electron diffraction (SAED), X-rayspectrometer (EDS) and X-ray diffraction (XRD) technology. The main contents include:(1) with a mixture of Ga2O3powder and graphite powder as the raw material, and the Auas catalysts, Ga2O3nanostructures were prepared on the single-crystal Si substrate at1100℃for different times by using the simple thermal evaporation method. When thetime is30min, we can find that large amounts of Ga2O3nanowires with a diameter of100nm-500nm formed on the entire surface of the substrates. When time is extended to60min and90min, a large number of Ga2O3nanorods were found on surface of thesubstrates. It can well explain the growth time has a certain influence on the morphological structure. TEM, XRD and Raman test results showed that the sample isGa2O3.(2) with a mixture of Ga2O3powder and graphite powder as the raw material, and the Auas catalysts, Ga2O3nanostructures were prepared on the single-crystal Si substrate at1200℃for different times by using the simple thermal evaporation method. A newprocess of nucleation was found in this experiment. SEM showed that large amounts ofGa2O3nanowires with a diameter of about200nm-300nm formed on the entire surfaceof the substrates like the dandelion. EDS and Raman test results showed that the sampleis pure Ga2O3. Finally, the growth mechanism of the special Ga2O3nanowires wasdiscussed.(3) with a mixture of Ga2O3powder and graphite powder as the raw material, and the Auas catalysts, Ga2O3nanostructures were prepared on the single-crystal Si substrate at1300℃for different times by using the simple thermal evaporation method. We get theGa2O3nanowires with a diameter of150nm-250nm and a length of Several hundredmicrons at15min,30min and45min. After60min, the nano structure change into thenanotube. It can well explain the growth time has a certain influence on themorphological structure. Finally, the growth mechanism of the Ga2O3nanowires wasdiscussed.