Preparation And Photoelectric Properties Of Low Dimensional Materials Boron Based

Boron based materials have the characteristics of high melting point, high hardness, corrosion resistance, wear resistance, photovoltaic performance, commonly used in national defense, aerospace, civil and other fields. Theoretical and experimental results show that, the boron nano material has a very rich morphology and excellent physical and chemical properties, these characteristics determine that they will have a very broad application prospects. Therefore, the research of boron based nano material has a very important scientific value and extensive application value.This paper is divided into the following three parts:First, using the diborane as boron source, through the method of thermal decomposition of preparation of ultra thin single crystalline boron nanoribbons. Compared with the previous thick boron nano film, the nano belt shows obvious advantages:①The electron emission characteristics. At room temperature the turn-on field (3.6V/μm) and threshold field (5.08Vμm-1)are low, and have the field emission property stability; temperature field emission shows that, with the increase of temperature, turn-on field and threshold field decreases, and the field emission current density increased, the mechanism may be:gas on the surface of materials under high temperature, the adsorption/desorption effect leads to lower effective work function.②The high electron transfer rate. Experimental results show that the ultra-thin electronic single crystal boron nanoribbons migration rate as high as1.26×10-1cm2V-1s-1, two orders of magnitude higher than that reported in the literature.③The conductivity is high. Room temperature conductivity of single crystal boron nanoribbons was2.8×102Ω-1cm-1, this is the best performance by far; electronic transport properties show that the electronic transition temperature with double activated conductance mechanism, electron behavior at low temperature with Mott model.④The good light detecting function. The test results show that:the boron nano ultrathin crystal with high sensitivity, fast response speed, high quantum yield, good stability, boron nanometer material is superior to other reports.Two, using CeCl3as the cerium source, diborane as source of boron, carbon cloth as the substrate at high temperature and low pressure, preparation of large area CeB6nanowire arrays. Different from previous reports, this paper is based on the flexible nanowires excellent carbon cloth as the substrate, the results will be used widely in the future flexible electronic display device. The use of X-ray powder diffraction (XRD), Raman spectroscopy (Raman), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), X-ray ray photoelectron spectroscopy (XPS) and other testing methods were analyzed, the results show that:the sample a large area of the nanowires on the substrate, the length is about10μm, a diameter of about100nm, growth along the [100] direction. Electron emission results are further tested.Three, with the diborane as boron source, methane as carbon source, a large number of successful synthesis of boron carbide (BxCy) nanobelts and nanowires array by X-ray powder diffraction (XRD), Raman spectroscopy (Raman), field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) indicated that the synthesized the samples of BsC low dimensional materials. The field emission test results show that the electron emission characteristics of boron carbide is excellent; electronic single nano material transport shows that the good conductive properties. Boron carbide materials, photoelectric detection characteristic and the physical and chemical characterization of further progress, expect a good performance.