Preparation And Characterization Of SiCO(H)Thin Film Materials And Their Precursors

Through comprehensive analysis of properties and the preparation methods of various candidatematerials with low dielectric constant. We dedicate that the properties of SiCO(H) film materials havethe advantages of thermal stability and mechanical properties of inorganic materials as well as organicmaterials with good low k value. The precursor molecule containing Si, C, O, H elements wasselected as research object and treated by sol-gel method, using spin-coating technique. After350℃annealed, the Si-O-Si structure was formed in the thin film. The structure, thermal stability, electricaland mechanical properties of SiCO(H) thin films were measured and discussed.In this thesis, the thin films were prepared using a new precursor[trimethoxy[2-(7-oxabicyclo[4.1.0]hept-3-yl)ethyl]silane] via spin-coating technique. Afterannealing at350℃, the resulting films were characterized by SEM, TGA, AFM, FT-IR, XPS,nanomechanical testing and electrical measurements. FT-IR showed that the Si-O-Si structures wereformed while O-H bond disappeared in the films. XPS showed the result thin film had Si, C, Oelements. TGA result indicated that the films had good thermal stability and there was no obviousthermal decomposition before400℃. After being annealed at350℃for2hours, the surface wasformed. Eris about4.82GPa and H is about1.11GPa. Dielectric constant (k) value is about5.07~5.2and leakage current density is about2.98×10-7A/cm2~2.72×10-6A/cm2and breakdown voltage is2.25V~2.5V at1MV/cm.Endo-3,7,14-Tris{dimethyl[2-(5-norbornen-2-yl)ethyl]silyloxy}-1,3,5,7,9,11,14-heptacyclopentyltricyclo[7.3.3.15.11]heptasiloxane was used as monomer for the preparation of polyhedral oligomericsilsesquioxane(POSS), the reaction mechanism for hydrosilylation reaction was addition reaction of Hatom on silicon atom on POSS with hexa-1,5-diene. Pt was used as catalyst in catalytic reaction. Theproduct was characterized by NMR and XPS.