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Preparation And Anti-corrosion Performance Of Graphene Film On Copper

Posted on:2014-08-29Degree:MasterType:Thesis
Country:ChinaCandidate:L L YuFull Text:PDF
GTID:2181330422468464Subject:Materials science
Abstract/Summary:PDF Full Text Request
In this thesis, we used redox process and chemical vapor deposition (CVD)methods independently to prepare graphene film on copper, in order to improve theanti-corrosion property of copper matrix. The morphology and structure of graphenefilm of various conditions were analyzed by XRD, SEM and Raman Spectrum.Finally the anti-corrosion property was tested by the cyclic voltammetry (CV) curve,polarization curve and electrochemical impedance spectroscopy (EIS).The results in the redox process indicated that the reduction efficiency of HI acid,hydrazine hydrate and hydrogen were reduced in turn. HI acid eliminated the majorityof oxygen containing functional groups and the film was the thinnest, but the acidreduced the adhesion strength between the film and copper substrate. Hydrogenensured the integrity of the film, but could not wipe out the oxygen groups well andthe film was thicker. The reduction of hydrazine hydrate was good and it did lessdamage to the film. From the electrochemical test of the hydrazine hydrate treatedsample, we found that the corrosion resistance of copper substrate didn’t improvesignificantly.In the CVD part, as the extension of growth time, the thickness of graphene filmincreased, along with the defects. We demonstrated that the necessary hydrogenplayed a role of the catalytic pyrolysis of methane and the graphene nucleation. Thepolarization curve showed that the7min growth time of graphene coated Cupossessed best corrosion-inhabiting performance. And the EIS indicated that thisgraphene coating made the sample corrode slower by17times than pure Cu. We caninfer that the7min graphene had the best uniformity and continuity. The4min filmwas thin, but not continuous. The10min film was thickest, but had most defects. Wedrew a conclusion that the best process parameters was600/40/30sccm flow rate ofAr/CH4/H2, temperature of1000℃, reaction time7min.
Keywords/Search Tags:Graphene, Redox process, Chemical vapor deposition, Electrochemical, Corrosion
PDF Full Text Request
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