Preparation And Physical Property Research Of Rare-Earth Doped Perovskite Cobaltites

In this paper, thin films of(La1-x Prx)0.7Sr0.3Co O3(x=0, 0.2, 0.4, 0.6, 0.8) and La0.82Sr0.18Co1-x Crx O3(x=0, 0.2, 0.4, 0.6, 0.8, 1.0) have been deposited using pulsed laser deposition(PLD) method from targets prepared by the solid state reaction technology, the substrates are single crystal La Al O3(100). Thin films analyzed by X-ray diffraction(XRD) and atomic force microscope(AFM), then we measured the temperature dependences on the resistance in all the films, and so on. The main works and conclusions are as follows:1. We analyzed the structure of(La1-x Prx)0.7Sr0.3Co O3(x=0, 0.2, 0.4, 0.6, 0.8) and La0.82Sr0.18Co1-x Crx O3(x=0, 0.2, 0.4, 0.6, 0.8, 1.0) targets prepared by the solid state reaction technology with XRD.2.(La1-x Prx)0.7Sr0.3Co O3(x=0, 0.2, 0.4, 0.6, 0.8) thin films have been deposited using PLD method, and the preparation process is introduced. We analyzed the structure and the surface topography of thin films using XRD and AFM, respectively, then measured the temperature dependences on the resistance in all the films, and the photo-induced resistance effects of films, at different temperatures, irradiated by 532 nm laser with different intensity.3. La0.82Sr0.18Co1-x Crx O3(x=0, 0.2, 0.4, 0.6, 0.8, 1.0) thin films have been deposited using PLD method, and the preparation process is introduced. We analyzed the structure and the surface topography of thin films using XRD and AFM, respectively, then measured the temperature dependences on the resistance in all the films, and the photo-induced resistance effects of all the films irradiated by 532 nm laser with different intensity at different temperatures.