Effect Of Annealing Temperature On The Structure And Morphology Of CdSe Thin Films

In this paper we focus on the CdSe semiconductor material, due to the outstanding performance in visible light photo-electric properties in optoelectronic devices which are widely used in thin films solar cells. CdSe thin films growth conditions are studied and annealing process effect on the performance of CdSe.CdSe films are grown on glass substrates or Si substrates under difference currents in vacuum evaporation device. The currents are set at 70 A, 75 A, 80 A,85A, 90 A and 95 A, respectively. The structures of films are analyzed by X-ray diffraction. The results show that optimum current for preparing CdSe films is75 A.The CdSe films are annealed at Ar atmosphere and the temperature of anneal are 400℃、450℃、500℃、550 ℃ and 600℃, respectively. The annealed CdSe films are characterized by metallographic microscope, energy dispersive spectroscopy and X-ray diffraction. The films whose annealed temperature is450 ℃ are of uniform and smooth surface, showing 450 ℃ is the best anneal temperature.The CdSe films are further analyzed through X-ray diffraction spectrum. The result shows that the CdSe thin films are grown along the direction of(002), and the grain size matches with the films thickness. All the results show that optimum current for preparing CdSe films is 75 A, and 450℃ is the best anneal temperature.This paper provides accurate and reliable data reference for the further research on the thermal evaporation growth and anneal treatment of CdSe thin films.