An Approximation Of Semiconductor Device By Mixed Covolume Method

The drift-diffusion model of a semiconductor device is described by a system of three quasi-linear partial differential equations for initial boundary value prob-lem. The electric potential is governed by an elliptic equation and discretized by mixed covolume method. The electron and hole concentrations are governed by two equations of convection-dominated diffusion type and discretized by characteristics-mixed covolume method. The scheme conserves mass locally. In order to derive the optimal L2-norm error estimates, a post-processing step is included in the approx-imation to the scalar concentration. Numerical experiment is presented finally to validate the theoretical analysis.