Influence Of Two-Mode Property Of Bulk Transverse Optical Phonons On Electronic Mobility In Al_xGa_1-xGaN Quantum Wells

Based on the dielectric continuum phonon model, uniaxial model and Lei-Ding balance equation, the scattering effect of interface phonons and confined phonons on electron are discussed. Our paper focuses on the discussing about the influence of two-mode property of bulk transverse optical phonons of AlxGa1-xN on electronic mobility in AlxGa1-xN/GaN quantum wells near room temperature.It is found from this study that the contribution to the electronic mobility from confined optical phonons increases with increasing A1 component x under consideration of two-mode property of bulk transverse optical phonons. However, the contribution from anti-symmetric interface optical phonons increases firstly and then decreases, besides, the contribution from symmetric ones always decreases. At this moment, the scattering of symmetric interface phonons play a main role on the electron in a whole region of x. As a result, the total mobility of the electron decreases firstly and then increases. It should be noted that the theoretically calculated electronic mobility by considering the influence of the two-mode property is closer to the experimental value in comparison with the result of neglecting the two-mode property. In addition, the electronic mobility varying within a wider x region is given to obtain a more detailed result about the effect of ternary mixed crystals. This work should provide guidance for further theoretical work and experiments in future.