The Eletronic Transporting Property Of Line Defect In Graphene Nanoribbon

The article describes several typical low-dimensional semiconductor structures.Then we make a discussion aboat the research hotspot in graphene nowadays.Westudy the electronic transporting property of the different permutations of line defectsin graphene nano-ribbon theoretically. When studying the electronic transportingproperty of quantum wire, we must reveal the image of quantum coherence.Theessence is to research its Quantum coherence and Fano effects.In this paper, we makea study of the electronic transporting property of the different permutations of linedefects in graphene nano-ribbon by using the Green’s function method, Originmapping software and Fortran language systematicly and get some meaningfulresults.Firstly, the5-5-8type line defects are embedded in Armchair graphenenano-ribbons strips which have different length. The line defect is stacked by twopentagons and one octagon periodically and alternately.The line defect embedded inthe nano-ribbons will produce the Fano effects and the continuous bound state. Weobserved that when we change the length, width, number, relative position of theline defects, it lead to a change of the transport of electrons. When a line defect movesin Armchair graphene nano-ribbon, line defect causes a strong localized states in thevicinity of the Dirac point, under the circumstances we can regard the graphenenano-ribbons as quantum dots.Secondly, in graphene nano-ribbons, we embed a new line defect which isalternately and periodically stacked by a pentagon and a heptagon. We know that thenew line defect destroy the transporting property of electron in conduction band ofstrip through data analysis. When embing a special type of line defects in graphenenano-strips, the transporting property of electron are not single, it can not onlyenhance the ability to transport electrons, but also decline the conductance value tozero in the phenomena of anti-resonance.The Fano anti-resonance property ofArmchair graphene nano-ribbons is related to the defects. The position of theembedded line defects can also affect the transporting property of electrons.Finally, we study a special type of line defect which is stacked by two kinds ofdifferent structures in different proportions. We observe the transporting property of electron when the proportion and position of the particular line defect have changed.We can see a strong oscillation in the transport of electrons. The new structure of theline defect has a complex effect on enhancing the transport of electrons.