Structure Design And Material Epitaxy Of Multi-Active Regions Resonant Cavity Light Emitting Diodes

The PMMA Plastic Optical Fiber (POF), which is the key sector of project of fiber-to-the-home, requires a stable, low-cost lighting source. Since it is difficult to achieve a stable, low-cost lighting source at 470nm, which is the PMMA POF's lowest attenuation wavelength. The lighting source at 650nm, which is the second lowest attenuation wavelength, is the best choice. Resonant cavity light emitting diode(RCLED) becomes the best lighting source of PMMA POF communication system for its narrow linewidth, small radiation angle, high extraction efficiency and high bandwidth, as well as zero threshold, high yield, better temperature characteristic and low complexity.Similar to light emitting diodes (LEDs) and Vertical cavity surface emitting lasers (VCSELs), RCLED also suffer a problem of temperature that cannot be neglected. As the applications of RCLED were spread over, demand of stable temperature characteristic of RCLED was higher. How to improve the characteristic of RCLEDs comprehensively over all the aspects becomes a hot issue around the world.This dissertation focuses on several parts as fellow:First, a brief introduction of development of fiber-to-the-home project was made to induce the RCLED as the lighting source of PMMA POF communication system, and its advantages and state-of-art. The principle basic structure and constitute of RCLED were demonstrated. An emphasis was focus on the influence of resonant cavity on the spontaneous radiation pattern through computer simulation. And a detailed explanation was made on the key structure design parameter, as well as the effect of temperature on the characteristic of RCLED.Secondly, the concept of multi-active regions RCLED was induced, and the theory of tunnel junction was illustrated. Then, through method of transfer matrix and source term, the numerical simulation of optical field and far-field pattern for RCLED was made. An emphasis was on the analysis and numerical simulation of optical field and far-field pattern for RCLED, which were a key sector in RCLED structure design through anticipate the result of epitaxy from numerical simulation result. Additional, in order to make a tradeoff between extraction efficiency and manufacture cost, illustration was made in term of the relationship between reflectivity of top Distribute Bragg Reflectors (DBRs) and extraction efficiency enhancement through simulation and experimental data.Third, the epitaxy growth of RCLEDs was introduced. Moreover, the basic theory and constitute of Metalorganic Chemistry Vapor-Phase Deposition (MOCVD) were illustrated. The analysis methods, such as the PL spectrum, White reflectant spectrum, Double Crystal X-ray diffraction were demonstrated, which can be a guide to the epitaxy growth, as well as the simulation before epitaxy. In addition, four kind of metal contact pattern for different application were made in order to compare the different effect of metal contact on the characteristic of RCLEDs.Finally, the resulting RCLED had an output power of 0.63mW, and the Full Width at Half Maximum (FWHM) was 13.4nm.This article was supported by Beijing Education Committee Science and Technology Plan Surface Projects (KM200810005002) and Funding Project for Academic Human Resource Development in Institutions of Higher leaming Under the Jurisdiction of Beijing Municipality...