The Test Of Phosphorus In Heavy Arsenic Doping Silicon Wafer Using SIMS

Silicon,germanium and gallium arsenide are popular materials used in ICs and semi-conduct devices, while silicon is the most popular one. So, it's important for us to do some research on it. Here we describe the growing process of mono-crystalline silicon, and the doping mechanism of silicon. At the same time, we study the distribution of phosphorus in silicon.In this paper we make use of SIMS (secondary ion mass spectrometry) to systematically test the trace amount of phosphorus in heavy arsenic doping silicon wafers, the limit of detection reaches as low as 5×10¹³cm^-3. The experiments reveal that the pretreating of samples have great effect on the results of the test. Different pretreating leads to different surface roughness. And the surface roughness will affect the testing time and accuracy directly. At the same time, the high vacuum makes the background noise of sample test and detection limit decrease greatly, and satisfies the quantitative determination of different silicon wafers with different purity.By the use of SIMS, we obtain the trace amount of phosphorus in FZ silicon, CZ silicon without doping, heavy Arsenic doping silicon, semiconductor poly-silicon, solar-grade silicon. And we compare this method to other methods. Finally we know that SIMS is one of the best ways to precisely quantify the trace amount in heavy arsenic doping silicon wafers.