Numerical Research On The Organic Light Emitting Devices

In recent years, the study of organic solid electric devices has attracted much interest and obtained great achievements. At present, the devices with good stability, long lifetime, low applied voltage is required. In order to improve the performances of organic electroluminescence devices (OLEDs), research on the process of the light emitting of the organic material and the devices' physical mechanism, the performance of the doping organic semiconductor and numerical simulation of the OLEDs is very important. Based on those problems, following work has been done.1. Using molecule orbit to explain the the process of the light emitting of the organic material, and developing a new model to explain the the process of the light emitting of devices' physical mechanism.2. Building the model and theory of the physically doped organic semiconductors and researching on the effect of doping concentration and the ambient temperature on the carrier concentration. Analytical expressions of generalized Einstein relation for electron and hole transport in pure and physically doped organic semiconductor thin films have been developed.3. Based on the drift-diffusion theory for the motion of charge carriers and mobility is electric field depended, we adopted the method of numerical calculation to study the potential, electric field, carrier density and recombination rate in the bipolar single layer OLEDs.4. Based on the drift-diffusion theory for the motion of charge carriers, we research on the effect of work function of electodes and mobility on the position and width of the recombination zone and recombination efficiency in single layer OLEDs.5. Investigating the models of single and bipolar carriers in bilayer OLEDs. Building an analytical model to research the influences of doping concentration, electric field and the ambient temperature to the width of the recombination zone.