Small-Signal Modeling And Extraction Method In GaN HEMT

Compound semiconductor high electron mobility transistor equivalent circuit modeling the field of microwave circuit is a very important subject, the accuracy of model simulation results directly determine credibility. With wireless technology's rapid development, wide-band gap GaN semiconductor material as a third-generation semiconductor materials for its excellent electrical characteristics make GaN HEMT modeling become a research hotspot. This paper is mainly built on a GaN HEMT small-signal equivalent circuit model, and look forward to a power amplifier as the basis for the future.The paper first in-depth study of the GaN HEMT device physics mechanism, has been under high-frequency capacitance device distribution effect a greater impact on device performance conclusions. Therefore, the 14 components in the traditional equivalent circuit model based on an increase of two parasitic capacitance gate to indicate the source of crosstalk between gate drain.Then, a careful analysis of the GaN HEMT small-signal equivalent circuit model and parameter extraction method, from the extraction process of classification is mainly divided into two categories: direct extraction and step-by-step extraction. Extracted directly in the small-signal equivalent circuit topology based on the extraction of more than a dozen parameters at the same time, by calculating the value of the various components into the into the ultimate value of S parameters and test the S parameter value for comparison, the optimal parameter values. Step-by-step extraction extraction first external parameters, that is, non-intrinsic parameters, and then extracted parasitic parameters as the known conditions, to extract the intrinsic parameters. Directly extracted from the theoretical advantages of high accuracy, high reliability and disadvantage is difficult to extract. Step-by-step extraction of the advantage of simple parameter extraction, computing the volume of small, easy to implement, disadvantage is the need for more data. After comparing the advantages and disadvantages, this paper step-by-step extraction method using extracted model parameters.The bias in the measurement under the conditions of S parameters of parasitic parameters and intrinsic parameters were extracted. Chapter III of the paper describes this part of the large-signal model parameter extraction for a simple description. Chapter IV thesis GaN HEMT power amplifier for the working principle, performance parameters are analyzed, and this thesis research necessary to describe the significance of that GaN HEMT equivalent circuit model parameter extraction for GaN HEMT power amplifier research services . Then looked to the GaN HEMT power amplifier applications.