The Numerical Simulation And Analysis Of Quantum Structure Optoelectronic Devices

In order to study basic processes in the optoelectronic devices, it must be known the relations between the internal parameters and the external properties. But the measurement of internal parameters is very difficult. So the device modeling and computer simulation is a good way to analyze optoelectronic devices.Because the quantum structure optoelectronic devices involve electricity, optics, Electro-optical Interaction and quantum effect, it is difficult to develop and optimize the optoelectronic devices by experimentation. So it is essential to simulate the characteristics of so that the design and optimization of the optoelectronic devices can be achieved.In this work, the feasibility of different software's device modeling for quantum structure optoelectronic devices is analyzed. Then the quantum well infrared photodetectors is theoretically analyzed and studied by numerical simulation with the aid of a powerful simulation tools Crosslight APSYS. The optimization analysis of the barrier width, barrier height and the number of quantum wells is studied by Apsys simulation. Besides, QWIPs with different material systems are compared and theoretically analyzed by simulation.With the aid of Analysis of Microelectronic and Photonic Structures (AMPS-1D), CIGS solar cells are modeled and analyzed. The open circuit voltage and short circuit current are studied by numerical simulation, and the effect of Ga content and E_g on the open circuit voltage, short circuit current and quantum efficiency are analyzed.