The Development Of VCSEL Laser Control System And Its Applications In The Chip-Scale Atomic Optical Devices

As atomic optics technology improves, the atomic optical device has developed to be a high-precision measurement method in many fields, such as CSAC, CSAM and CSAG. In recent years, the implement of alkali metal and MEMS fabrication help the atomic optical device such as CSAC and CSAM to achieve a lower power consumption and smaller size. This chip-scale device will extend the application of the atomic optical device. The development of the chip-scale atomic optical device is due to the two core technologies-the tuned diode laser and the fabrication of the atomic sensors. VCSEL, which has the properties of narrow line-width, low power consumption, high modulation index, small volume, and easy integration, has become a popular laser solution in chip-scale atomic optical devices.To develop the chip-scale atomic optical device (particularly the CSAC), the control system and high-frequency amplitude modulation properties of VCSEL are studied. Firstly, this paper describes the systematical design of the control system of 780 nm VCSEL, including the optical design, mechanical design, circuit design, realization scheme and hardware circuit. Then the electrical and optical characteristics of the system were tested. The electrical characteristic test includes the test of self-designed high precision constant current driver and temperature control module. The measurement results showed that the current accuracy is 0.1mA; the stability of output current is±0.02mA; the Ripple coefficient is 0.01; the temperature resolution is 0.1C; the temperature control accuracy is 0.01C. The experiment on the optical properties of the laser is carried out, such as: wavelength, light spot and fluorescence. The wavelength of the laser is 780 nm and circular polarized. The threshold current is 0.4mA. The consumed power is 0.25mW. It meets well with the requirements of the CSAC. Based on the high precision resistance match circuit, which is developed by the principle of micro strip matching, we also study the property of the high frequency modulation of the VCSEL. Experiment results show that: the transfer efficiency with the largest edge of 60% is achieved under the frequency of 3.4GHz and the RF power of 5dBm. The paper further measured and analyzed the sideband asymmetry brought by Bogaov Effect of semiconductor laser.