Growth Of AlInN Material And Investigation Of Ultraviolet LED

The band gap of the GaN-based material can be turned between the band gap of 0.7ev and 6.2ev,which is being made across a wide front of light emitters spanning from the Visible spectrum to the ultraviolet spectrum,So,the GaN-based material have the important applications in many fields,such as,navigate,military,some civil industries。GaN based material have applications on LEDs,short avelength lasers,ultraviolet detectors,high temperature and high power electronic vices,but have a little of report about AlInN ternary alloy。In this article,we present studies on samples grown in the LP-MOCVD reactor, aimed towards the growth of AlInN ternary alloy which is to match the lattice constant to GaN,and the violet device was made of AlInN ternary alloy。Main works include:1:The current of GaN-based LEDs was analyzed by using theory model,we found that uniform current spreading does not only depend on the electrode distributing but also is a strong function of the device structure.2:AlInN epilayers were grown at the different indium source flux and aluminium source flux,which have the different incorporation of indium。3:AlInN epilayers were grown at the different temperature,the incorporation of indium was found to decrease with increasing growth temperature。4:AlInN epilayers were grown at the different pressure,the incorporation of indium was found to dectease with increasing growth pressure in metalorganic chemical vapor deposition(MOCVD)。5:The aspects of Ga incorporation into AlInN during the MOCVD growth were discussed,which regarded that come from the bottom layer and gas channels。6:AlInN(Ga) epilayers were grown which is to match the lattice constant to GaN。7:The ultraviolet AlInN(Ga) quantum well light emitting diodes was growth and made。This work is supported by National Natural Science Foundation and Natural Science Foundation of Fujian province.