| With the development of micro-electronics, ultrafast electronic devices and ultrafast optic-electronic devices are playing the more and more important role in information processing field. Inpresent condition of technology, however, it is difficult to measure the performances and parameters of those devices conveniently and accurately. Therefore, the demand to ultra fast optic-electronics measurement system with wide bandwidth and high sensitivity is urgent.Under this background, the ultra fast optic-electronics measurement system based on photoconductive switch is studied, designed, and constructed. Through the analysis of principle of ultra fast photoconductive, the electro-optic sampling system prototype is studied and constructed to achieve its measurement, the key components influencing the system's overall performance are analyzed and tested, in order to develop the automatic test system. The main contents of this paper include:1. A large number of technical references are analyzed; the techniques used for ultrafast electrical signal's characterization are reviewed and compared.2. By analyzing the fundamental principle of photoconductive switch, the ultrafast photoconductive switch is designed, including choice of its substrate material and design of its structure and fabrication method. The output characteristic of the photoconductive switch is also calculated, theoretically.3. By AFM tip induced oxidation, the fabrication of photoconductive switch on Ti film is tried; relevant mechanism is analyzed.4. The PCSS is simulated by ATLAS device simulation software, so the structure characteristics and the transport properties of PCSS can be received.5. The principle of electro-optic effect is analyzed, from which the principle of the EOS technique is introduced. Parameters used to evaluate the performance of an EOS system are studied; the structure of the EOS system is designed.6. The EOS testing system, including the optical part and the electrical part is constructed. |
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