Characterization And Analysis On Optics Character Of Semiconductor Luminescence Material

Today, the domains of medicine, national defense and every aspect of human being's living are affected by semiconductor luminescence material. It is very important to characterize and analyze the luminescence characters of semiconductor luminescence material, for people are crying for better materials to satisfy their needs. The research can not only find out the unknown properties of the materials, but also guide and ameliorate the manufacture, so people will make better use of the materials and bring us a revolution of luminescence.A variety of techniques are used to probe the optical character, and luminescence is a very strong tool for detection and identification of point defects in semiconductors, especially in wide-band-gap varieties where application of electrical characterization is limited because of large activation energies that are beyond the reach of thermal means. Basic structure, growth mode and luminescence mechanism are particular introduced. The different instances of the samples are analyzed by photoluminescence (PL). The results are obtained from comparing the fitting data. Materials with wide-band-gap just like InGaN are chose to analyze.Optical properties of InGaN with different indium content have been systematically studied by temperature dependent photoluminescence (PL). It shows a red-shift of the main peak with increasing of full width at half maximum (FWHM), and blue-shift of the main peak with decreasing the FWHM. The datum of the intensity of the main peak depended on 1/T are fitted. It indicates that the nonradiative recombination centers of sample B are easier to be activated and it demonstrates that the carrier-escaping effect in sample B is more prominent than that in sample A. Therefore, why the sample with high indium content shows low luminescence efficiency is explained.In the research of exciting the LED samples by different energies, we found that when exciting energy lower than the band-gap of GaN, the wide peak appeared at about 2.9eV disappeared and can be attribute to the defects in GaN.Finally, the further research is established.