Research Of IGBT Failure Mechanism And Examination Method In Power Source

The Insulated Gate Bipolar Transistor is able to manage high power with high frequency. The great development of the IGBT characteristics in the recent years has made it a dominating device in the middle-high power application field. However, the failure of IGBT between the use bring huge influence and loss, through the analysis of the failure mechanism enhance the use reliability and system's validity, avoids having the duplicated problems.This article has studied the IGBT component operational factor and the principle, uses the double-pole transmission theory association to set up the solution electron and the hole transmission equation, obtained the stable state electronic and hole current expression, which are better fit the Insulated Gate Bipolar Transistor.Base in the MATLAB software, to the silicon parameter heat conductivity, the carrier concentration, the carrier lifetime, the electronic mobility, the hole mobility and the bipolar diffusion coefficient has carried on the simulation, and qualitative analysis IGBT expiration factor. Carried on the dynamic model design and the simulation under the MATLAB environment to IGBT, and has carried on the detailed analysis to the IGBT failure mechanism.Built the tested the electric circuit, has carried on the test to the IGBT expiration parameter, This article findings regarding judge the IGBT expiration as well as the expiration degree correctly, then judge correctly and forecast that equipment's possible breakdown, which have certain application reference value.