Study Of Photonic Phase Shifter Generated RF Signals Based On The SOI

High speed and large capacity optical transfer and exchange as the main direction of modern communication network. Being one of the key devices in the communication and radar applications, photonic phase shifter generated RF signals plays a key role in the performance improvement of the optical and phase controlling arrays. Si-based Silicon-On-Insulator (SOI) optical waveguide technology and the Si-based micro-electronics devices has been one of the hot topics in the integrated optics because it provides a high index contrast waveguide platform compatible with existing monolithic microelectronic fabrication processes and the inherent compatibility with optical fibers allowing low coupling loss.The propagating characteristics of photonic phase shifter generated RF signals based on the SOI optical waveguide are simulated by time field domine finite thrust differential method (FDTD) and beam propagation method (BPM). The transmission characteristic of the SOI optical waveguide is simulated. The design rules for SOI single-mode rib waveguide are analyzed, including single-mode conditions, coupling efficiency with single-mode optical fiber, capability of confining optical fields and so on. The transferring characteristics of SOI curved waveguides and intersected waveguides are studied. The bent waveguides with different curved radius and the intersected waveguides with various intersecting angle are also designed and fabricated.A method mechanism to fabricating three-dimension SOI optical waveguide, namely inductively coupled plasma (ICP) dry etching, using C4F8/SF6/O₂ mixed gases, is investigated. Several complications effecting etching quality are analyzed, including airflow ratio, RF power, the quality of metal mask film and the temperature of the SOI wafer. And the methods to improve the etching quality are given, including imperative cooling of loading desk and multi-step etching.The shunt and join implement of "Y" branch SOI 1×2,and 1×4 MMI couplers are designed and fabricated. The power uniformity of these devices are 0.2,0.3 and 1.5dB, respectively. Improvement on the homogeneity of ICP large-area etching is useful to the optimization of the couplers' characteristics. And the optical waveguide delay line is also designed and fabricated, the attempt are made to improve the territory. At the same time, we study the source of the optical waveguide loss, and bring forward the specific method to reduce the loss.